Selected Capabilities:
- Yield Improvement
- Process Integration
- Process Flow Engineering
- Failure Analysis
- Process Development
- Technology Transfer
- Specification Drafting
- Process
- Product
- Design for Manufacturability
Selected Technologies:
- Aluminum- BEOL
- Copper Damascene- BEOL
- III‑V
- II-VI
- CMOS
- 3D-IC
- Wafer Bonding
Selected Processes:
- Thin Film Deposition
- Chemical Vapor Deposition
- PECVD, RT-CVD
- MOCVD
- Physical Vapor Deposition (PVD)
- Sputtering, Evaporation, ALD
- Chemical Vapor Deposition
- Interfaces and Surfaces
- Surface Cleaning and Processing
- Surface/Interfacial Characterization
- Metrology
- Infrared/Raman Spectroscopy
- Ellipsometry
- In-situ Measurements
- Optoelectronic Characterization
- Electrical Testing
- XPS, AES, EDX, XRD, SEM
- Thermal Processing
- Etch (Dry and Wet)
- Chemical Mechanical Polishing
We have extensive process development and process integration experience in CMOS and III‑V (nitride, phosphide, and arsenide) technologies. We have deep experience scaling semiconductor processes into manufacturing and resolving all aspects of the ramp, including CMOS and III‑V optoelectronic products. We are also recognized experts with creating and integrating new materials into semiconductor products, and developing and improving process equipment given our deep understanding of process/equipment dependencies. We understand the challenges posed by rapid growth, convergence and/or consolidation, and help our clients turn these challenges into opportunities for profitable growth. Our team has worked through numerous business challenges and can help with your restructuring, operational improvement program, or organizational realignment, so you can compete more effectively.
Our experience ranges from bare wafer to test and packaging for several clients including Hewlett-Packard, Intel, and Agilent Technologies (now Avago). We have spearheaded novel sensor concepts to create highly-integrated low-cost instrumentation products.
We have developed many materials for advanced integrated circuit applications, including plasma-deposited low-dielectric constant (low‑κ), deposited semiconductors, and transparent conductors. In each case, the resulting material and process flow was compatible with high-volume CMOS fabrication.
With regards to III‑V materials, we have successfully integrated them into a variety of optoelectronic devices, including high-efficiency solid-state lighting LEDs (Philips-Lumileds), and high efficiency solar cells (Alta Devices).