Patents

  1. WO2015021124, EP3031084A1, Vacuum deposition system for solar cell production, (Assignee: First Solar, 2014)
  2. US7939022, Integration of colorimetric transducers and detector. (Assignee: Avago Technologies, May 10, 2011).
  3. US7096716, Integration of thermal regulation and electronic fluid sensing. (Assignee: Avago Technologies, August 29, 2006)
  4. US20060138312 Solid-State Spectrophotometer. (Assignee: Avago Technologies, 2006.)
  5. US6902946, Simplified upper electrode contact structure for PIN diode active pixel sensor. (Assignee: Agilent Technologies, June 7, 2005)
  6. US6747773, Method and structure for stub tunable resonant cavity for photonic crystals. (Assignee: Agilent Technologies, June 8, 2004).
  7. US6384460 Self-aligned metal electrode structure for elevated sensors. (Assignee: Agilent Technologies, May 7, 2002).
  8. US6436488, EP1164206, JP2002047568A High deposition rate hydrogenated amorphous silicon (Method, material, and apparatus). (Assignee: Agilent Technologies, December 19, 2001).
  9. US6325977 Sensor array for detecting organic molecules by optical means. (10991470-1) (Assignee: Agilent Technologies, December 4, 2001).
  10. US6396118, EP1122790 A conductive mesh bias connection for an array of elevated active pixel sensors. (Assignee: Agilent Technologies, May 28, 2002).
  11. US6215164 Elevated image sensor array which includes isolation between uniquely shaped image sensors. (Assignee: Agilent Technologies, April 10, 2001).
  12. US20050007473, Reducing Image Sensor Lag. (Assignee: Agilent Technologies).
  13. US20040146242, Method and structure for coupling light in and out of an inplane waveguide through the top and bottom surfaces of photonic crystals. (Assignee: Agilent Technologies).
  14. US6387736, EP1049150 Method and structure for bonding layers in a semiconductor device. (Assignee: Agilent Technologies, May 14, 2002).
  15. US6373117, EP1050907, JP2001007310 A stacked multiple photosensor structure including independent electrical connections to each photosensor. (Assignee: Agilent Technologies, April 16, 2006)
  16. US6759724 Isolation of alpha silicon diode sensors through ion implantation. (Assignee: Agilent Technologies, July 6, 2004).
  17. US6586812, EP1045450, US6759724 Isolation of alpha silicon diode sensors through ion implantation. (Assignee: Agilent Technologies, July 1, 2003).
  18. US6545711, JP2000138363 A photodiode pixel sensor array having a guard ring. (Assignee: Hewlett- Packard Company, April 8, 2003)
  19. US6114739 Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode. (Assignee: Agilent Technologies, September 5, 2000).
  20. US6083572 Organic low-dielectric constant films deposited by plasma enhanced chemical vapor deposition. (Assignee: Hewlett-Packard Company, July 4, 2000).
  21. EP0999596 Sensor Array. (Assignee: Hewlett-Packard Company, June 10, 2000).
  22. US20060210427, Integrated chemical sensing system. (Assignee: Agilent Technologies.)
  23. EP0996164, JP2001007310 An elevated pin diode active pixel sensor including a unique interconnection structure. (Assignee: Hewlett-Packard Company, April 26, 2000).
  24. US6051867, EP1052698, JP2001024059 An improved interlayer dielectric for passivation of an elevated integrated circuit sensor structure. (Assignee: Hewlett-Packard Company, April 18, 2000).
  25. US6027995 Method for Fabricating an Interconnect Structure with Hard Mask and Low Dielectric Constant Materials. (Assignee: Intel Corporation, February 22, 2000).
  26. US6018187, JP2000133792 An elevated pin diode active pixel sensor including a unique interconnection structure. (Assignee: Hewlett-Packard Company, January 25, 2000).
  27. US6016011, EP1049158 Method and apparatus for a dual-inlaid damascene contact to sensor. (Assignee: Hewlett-Packard Company, January 18, 2000).
  28. US5936261, JP2000156488 Elevated image sensor array which includes isolation between the image sensors and a unique interconnection. (Assignee: Hewlett-Packard Company, August 10, 1999)
  29. US5886410 Interconnect structure with hard mask and low dielectric constant materials (Assignee: Intel Corporation, March 23, 1999).
  30. US6759262 Image sensor with pixel isolation system and manufacturing method therefore (Assignee: Agilent Technologies, July 6, 2004).
  31. EP1195987, JP2002152596 System circuit and method for image lag photosensors.
  32. US6376275 A self-aligned metal electrode structure for elevated sensors. (Assignee: Agilent Technologies, April 23, 2002)
  33. US6649993 Simplified pixel isolation apparatus for an array device, and method for forming said apparatus (Assignee: Agilent Technologies, November 18, 2003).
  34. An improved biasing connection for an array of photodiodes.
  35. Isolation of a‐Si:H by CMP using dielectric as barriers.
  36. US6747773, JP2004151722 Method and Structure for Stub Tunable Resonant Cavity for Photonic Crystals (10020498-1). (Assignee: Agilent Technologies, June 8, 2003).
  37. US6786968 Method for Low Temperature Photonic Crystal Structures. (Assignee: Agilent Technologies, September 7, 2004).
  38. US7152758 Scented material dispense system for a hand-held device. (Assignee: Avago Technologies, December 26, 2006).
  39. W. Knoll, and J. A. Theil, "Use of a Liquid in Plasma Treatment of the Surface of a Container", 1993.
  40. J. A. Theil, "Method for Determining Permeability, Diffusion Coefficient, and Solubility Using Transient Permeation Data.", 1993.
  41. J. A. Theil, "Plasma Electrode Configuration for Enabling Thin Film Coatings on Three Dimensional Objects.", 1992. Filed.