Patents

  1. WO2015021124, EP3031084A1, Vac­u­um depo­si­tion sys­tem for solar cell pro­duc­tion, (Assignee: First Solar, 2014)
  2. US7939022, Inte­gra­tion of col­ori­met­ric trans­duc­ers and detec­tor. (Assignee: Ava­go Tech­nolo­gies, May 10, 2011).
  3. US7096716, Inte­gra­tion of ther­mal reg­u­la­tion and elec­tron­ic flu­id sens­ing. (Assignee: Ava­go Tech­nolo­gies, August 29, 2006)
  4. US20060138312 Sol­id-State Spec­tropho­tome­ter. (Assignee: Ava­go Tech­nolo­gies, 2006.)
  5. US6902946, Sim­pli­fied upper elec­trode con­tact struc­ture for PIN diode active pix­el sen­sor. (Assignee: Agi­lent Tech­nolo­gies, June 7, 2005)
  6. US6747773, Method and struc­ture for stub tun­able res­o­nant cav­i­ty for pho­ton­ic crys­tals. (Assignee: Agi­lent Tech­nolo­gies, June 8, 2004).
  7. US6384460 Self-aligned met­al elec­trode struc­ture for ele­vat­ed sen­sors. (Assignee: Agi­lent Tech­nolo­gies, May 7, 2002).
  8. US6436488, EP1164206, JP2002047568A High depo­si­tion rate hydro­genat­ed amor­phous sil­i­con (Method, mate­r­i­al, and appa­ra­tus). (Assignee: Agi­lent Tech­nolo­gies, Decem­ber 19, 2001).
  9. US6325977 Sen­sor array for detect­ing organ­ic mol­e­cules by opti­cal means. (10991470–1) (Assignee: Agi­lent Tech­nolo­gies, Decem­ber 4, 2001).
  10. US6396118, EP1122790 A con­duc­tive mesh bias con­nec­tion for an array of ele­vat­ed active pix­el sen­sors. (Assignee: Agi­lent Tech­nolo­gies, May 28, 2002).
  11. US6215164 Ele­vat­ed image sen­sor array which includes iso­la­tion between unique­ly shaped image sen­sors. (Assignee: Agi­lent Tech­nolo­gies, April 10, 2001).
  12. US20050007473, Reduc­ing Image Sen­sor Lag. (Assignee: Agi­lent Tech­nolo­gies).
  13. US20040146242, Method and struc­ture for cou­pling light in and out of an inplane wave­guide through the top and bot­tom sur­faces of pho­ton­ic crys­tals. (Assignee: Agi­lent Tech­nolo­gies).
  14. US6387736, EP1049150 Method and struc­ture for bond­ing lay­ers in a semi­con­duc­tor device. (Assignee: Agi­lent Tech­nolo­gies, May 14, 2002).
  15. US6373117, EP1050907, JP2001007310 A stacked mul­ti­ple pho­to­sen­sor struc­ture includ­ing inde­pen­dent elec­tri­cal con­nec­tions to each pho­to­sen­sor. (Assignee: Agi­lent Tech­nolo­gies, April 16, 2006)
  16. US6759724 Iso­la­tion of alpha sil­i­con diode sen­sors through ion implan­ta­tion. (Assignee: Agi­lent Tech­nolo­gies, July 6, 2004).
  17. US6586812, EP1045450, US6759724 Iso­la­tion of alpha sil­i­con diode sen­sors through ion implan­ta­tion. (Assignee: Agi­lent Tech­nolo­gies, July 1, 2003).
  18. US6545711, JP2000138363 A pho­to­di­ode pix­el sen­sor array hav­ing a guard ring. (Assignee: Hewlett- Packard Com­pa­ny, April 8, 2003)
  19. US6114739 Ele­vat­ed pin diode active pix­el sen­sor which includes a pat­terned doped semi­con­duc­tor elec­trode. (Assignee: Agi­lent Tech­nolo­gies, Sep­tem­ber 5, 2000).
  20. US6083572 Organ­ic low-dielec­tric con­stant films deposit­ed by plas­ma enhanced chem­i­cal vapor depo­si­tion. (Assignee: Hewlett-Packard Com­pa­ny, July 4, 2000).
  21. EP0999596 Sen­sor Array. (Assignee: Hewlett-Packard Com­pa­ny, June 10, 2000).
  22. US20060210427, Inte­grat­ed chem­i­cal sens­ing sys­tem. (Assignee: Agi­lent Tech­nolo­gies.)
  23. EP0996164, JP2001007310 An ele­vat­ed pin diode active pix­el sen­sor includ­ing a unique inter­con­nec­tion struc­ture. (Assignee: Hewlett-Packard Com­pa­ny, April 26, 2000).
  24. US6051867, EP1052698, JP2001024059 An improved inter­lay­er dielec­tric for pas­si­va­tion of an ele­vat­ed inte­grat­ed cir­cuit sen­sor struc­ture. (Assignee: Hewlett-Packard Com­pa­ny, April 18, 2000).
  25. US6027995 Method for Fab­ri­cat­ing an Inter­con­nect Struc­ture with Hard Mask and Low Dielec­tric Con­stant Mate­ri­als. (Assignee: Intel Cor­po­ra­tion, Feb­ru­ary 22, 2000).
  26. US6018187, JP2000133792 An ele­vat­ed pin diode active pix­el sen­sor includ­ing a unique inter­con­nec­tion struc­ture. (Assignee: Hewlett-Packard Com­pa­ny, Jan­u­ary 25, 2000).
  27. US6016011, EP1049158 Method and appa­ra­tus for a dual-inlaid dam­a­scene con­tact to sen­sor. (Assignee: Hewlett-Packard Com­pa­ny, Jan­u­ary 18, 2000).
  28. US5936261, JP2000156488 Ele­vat­ed image sen­sor array which includes iso­la­tion between the image sen­sors and a unique inter­con­nec­tion. (Assignee: Hewlett-Packard Com­pa­ny, August 10, 1999)
  29. US5886410 Inter­con­nect struc­ture with hard mask and low dielec­tric con­stant mate­ri­als (Assignee: Intel Cor­po­ra­tion, March 23, 1999).
  30. US6759262 Image sen­sor with pix­el iso­la­tion sys­tem and man­u­fac­tur­ing method there­fore (Assignee: Agi­lent Tech­nolo­gies, July 6, 2004).
  31. EP1195987, JP2002152596 Sys­tem cir­cuit and method for image lag pho­to­sen­sors.
  32. US6376275 A self-aligned met­al elec­trode struc­ture for ele­vat­ed sen­sors. (Assignee: Agi­lent Tech­nolo­gies, April 23, 2002)
  33. US6649993 Sim­pli­fied pix­el iso­la­tion appa­ra­tus for an array device, and method for form­ing said appa­ra­tus (Assignee: Agi­lent Tech­nolo­gies, Novem­ber 18, 2003).
  34. An improved bias­ing con­nec­tion for an array of pho­to­di­odes.
  35. Iso­la­tion of a‐Si:H by CMP using dielec­tric as bar­ri­ers.
  36. US6747773, JP2004151722 Method and Struc­ture for Stub Tun­able Res­o­nant Cav­i­ty for Pho­ton­ic Crys­tals (10020498–1). (Assignee: Agi­lent Tech­nolo­gies, June 8, 2003).
  37. US6786968 Method for Low Tem­per­a­ture Pho­ton­ic Crys­tal Struc­tures. (Assignee: Agi­lent Tech­nolo­gies, Sep­tem­ber 7, 2004).
  38. US7152758 Scent­ed mate­r­i­al dis­pense sys­tem for a hand-held device. (Assignee: Ava­go Tech­nolo­gies, Decem­ber 26, 2006).
  39. W. Knoll, and J. A. Theil, “Use of a Liq­uid in Plas­ma Treat­ment of the Sur­face of a Con­tain­er”, 1993.
  40. J. A. Theil, “Method for Deter­min­ing Per­me­abil­i­ty, Dif­fu­sion Coef­fi­cient, and Sol­u­bil­i­ty Using Tran­sient Per­me­ation Data.”, 1993.
  41. J. A. Theil, “Plas­ma Elec­trode Con­fig­u­ra­tion for Enabling Thin Film Coat­ings on Three Dimen­sion­al Objects.”, 1992. Filed.